Journal
OPTICS EXPRESS
Volume 16, Issue 21, Pages 16754-16765Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.16.016754
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A forward-biased p-i-n diode integrated with a ridge waveguide forms a basic Si attenuator building block. Disruptive power improvement was achieved through a recessed contact configuration by limiting the amount of Si volume for carrier recombination. A device model was established by using realistic surface recombination velocities instead of effective carrier lifetime concept to understand the device physics of the afore-mentioned Si attenuator. (C) 2008 Optical Society of America
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