Epitaxially-grown Ge/Si avalanche photodiodes for 1.3μm light detection

We designed and fabricated Ge/Si avalanche photodiodes grown on silicon substrates. The mesa-type photodiodes exhibit a responsivity at 1310nm of 0.54A/W, a breakdown voltage thermal coefficient of 0.05%/degrees C, a 3dB-bandwidth of 10GHz. The gain-bandwidth product was measured as 153GHz. The effective k value extracted from the excess noise factor was 0.1. (C) 2008 Optical Society of America.