Journal
OPTICS COMMUNICATIONS
Volume 284, Issue 16-17, Pages 3924-3927Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.optcom.2011.04.028
Keywords
LED; On-chip optical interconnects; Optoelectronic integrated circuits (OEIC); CMOS silicon photonics
Categories
Funding
- National Nature Science Foundation of China [61036002, 60536030, 60877035, 60976026, 61076023, 90820002]
- National Basic Research Program of China [2011CB933203, 2011CB933102]
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A monolithic silicon CMOS optoelectronic integrated circuit (OEIC) is designed and fabricated using standard 0.35-mu m CMOS technology. This OEIC monolithically integrates light emitting diode (LED), silicon dioxide waveguide, photodetector and receiver circuit on a single silicon chip. The silicon LED operates in reverse breakdown mode and can emit light at 8.5 V. The output optical power is 31.2 nW under 9.8 V reverse bias. The measured spectrum of LED showed two peaks at 760 nm and 810 nm, respectively. The waveguide is composed of silicon dioxide/metal multiple layers. The responsivity of the n-well/p-substrate diode photodetector is 0.42 A/W and the dark current is 7.8 pA. The LED-emitted light transmits through the waveguide and can be detected by the photodetector. Experimental results show that on-chip optical interconnects are achieved by standard CMOS technology successfully. (C) 2011 Elsevier B.V. All rights reserved.
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