Journal
OPTICS COMMUNICATIONS
Volume 283, Issue 9, Pages 1840-1844Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.optcom.2009.11.078
Keywords
DFB laser; Gain margin; Apodization; Single-mode
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Funding
- National 863 Project of China [2007AA03Z417, 2007AA01Z274]
- National Natural Science Foundation of China [60877043]
- New-Century Excellent Talents Supporting Program of the Ministry of Education, China
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An apodized DFB semiconductor laser based on reconstruction-equivalent-chirp (REC) technology is proposed and investigated numerically. By changing the duty cycle of the sampling period, the magnitude of the equivalent index modulation is varied. Thus the equivalent apodization is introduced instead of an actual apodization. This novel DFB structure is advantageous in that it can enlarge the threshold gain difference and improve the mode stability compared with the conventional DFB laser. Moreover, the structure can be easily fabricated by standard holographic technology instead of high cost Electron-beam lithography. (C) 2009 Elsevier B.V. All rights reserved.
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