Journal
OPTICS COMMUNICATIONS
Volume 283, Issue 18, Pages 3404-3407Publisher
ELSEVIER
DOI: 10.1016/j.optcom.2010.04.098
Keywords
Germanium; Hererojunction; Photodiode; Tensile strain
Categories
Funding
- National Basic Research Program of China (973 Program) [2007CB613404]
- Program for New Century Excellent Talents in University
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We report on normal incidence p-i-n heterojunction photodiodes operating in the near-infrared region and realized in pure germanium on planar silicon substrate. The diodes were fabricated by ultrahigh vacuum chemical vapor deposition at 600 degrees C without thermal annealing and allowing the integration with standard silicon processes. Due to the 0.14% residual tensile strain generated by the thermal expansion mismatch between Ge and Si, an efficiency enhancement of nearly 3-fold at 1.55 mu m and the absorption edge shifting to longer wavelength of about 40 nm are achieved in the epitaxial Ge films. The diode with a responsivity of 0.23 A/W at 1.55 mu m wavelength and a bulk dark current density of 10 mA/cm(2) is demonstrated. These diodes with high performances and full compatibility with the CMOS processes enable monolithically integrating microphotonics and microelectronics on the same chip. (C) 2010 Elsevier B.V. All rights reserved.
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