Journal
OPTICS AND LASER TECHNOLOGY
Volume 43, Issue 7, Pages 1358-1370Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.optlastec.2011.03.009
Keywords
Avalanche photodiode; HgCdTe; Excess noise factor
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This paper presents a comprehensive review of fundamental issues, device architectures, technology development and applications of HgCdTe based avalanche photodiodes (APD). High gain, above 5 x 10(3), a low excess noise factor close to unity, THz gain-bandwidth product, and fast response in the range of pico-seconds has been achieved by electron-initiated avalanche multiplication for SWIR, MWIR, and LWIR detector applications involving low optical signals. Detector arrays with good element-to-element uniformity have been fabricated paving the way for fabrication of HgCdTe-APD FPAs. (C) 2011 Elsevier Ltd. All rights reserved.
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