4.6 Article

Electronic structure of non-centrosymmetric Ag2HgSnS4 single crystal

Journal

OPTICAL MATERIALS
Volume 36, Issue 5, Pages 977-981

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/j.optmat.2014.01.005

Keywords

Chalcogenide crystals; Crystal growth; X-ray photoelectron spectroscopy; X-ray emission spectroscopy; Electronic structure

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X-ray photoelectron core-level and valence-band spectra for pristine and Artion irradiated surfaces of Ag2HgSnS4 single crystal grown by the Bridgman-Stockbarger technique have been measured in the present work. Ag2HgSnS4 single-crystalline surface was found to be sensitive to Ai' ion-bombardment: significant modification in top surface layers was induced leading to abrupt decreasing the content of mercury atoms in the layers. X-ray emission bands representing the energy distribution of the valence Ag d and S p states were recorded. S 3p states contribute predominantly in the central and upper portions of the valence band, with significant contributions in the lower portion of the valence band of the Ag2HgSnS4 single crystal. Ag 4d states contribute mainly in the central portion of the valence band of the compound under consideration. (C) 2014 Elsevier BAT. All rights reserved.

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