Journal
OPTICAL AND QUANTUM ELECTRONICS
Volume 47, Issue 7, Pages 1933-1940Publisher
SPRINGER
DOI: 10.1007/s11082-014-0060-7
Keywords
AlGaN; Avalanche photodiodes; Polarization doping; Numerical study
Funding
- Scientific and Technological Research Project of the 12th 5-Year Plan of Jilin Provincial Education Department [2013189]
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The AlGaN avalanche photodiodes (APDs) with a p-type graded AlGaN layer has been designed to investigate the polarization doping effect on the performance of the AlGaN APDs. The calculated results show that the APD with p-type graded AlGaN layer exhibits lower avalanche breakdown voltage and increased maximum multiplication gain compared with the conventional structures. The improved performances of the designed APDs are due to the polarization-assisted enhancement of the ionization electric field at the point of maximum multiplication gain. The spectral responsivity and distribution of electric field for the specific APDs are investigated numerically to explain the superior performances.
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