Journal
OPTICAL AND QUANTUM ELECTRONICS
Volume 40, Issue 14-15, Pages 1261-1266Publisher
SPRINGER
DOI: 10.1007/s11082-009-9279-0
Keywords
InGaAs photodiode; Generation-recombination current; Dark current; Numerical simulation
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We report on 2D simulations of dark current for InP/In(0.53)Ga(0.47)aAs/InP p-i-n photodiode. Our simulation result is in good agreement with experiment confirming that generation-recombination effect is the dominant source of the dark current at low bias. Effects of the thickness and doping concentration of the absorption layer on the dark current are discussed in detail.
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