4.5 Article

Air-stable and high-performance organic field-effect transistors based on ordered, large-domain phthalocyanine copper thin film

Journal

SYNTHETIC METALS
Volume 210, Issue -, Pages 336-341

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.synthmet.2015.10.023

Keywords

Organic field-effect transistors; Copper phthalocyanine; Kelvin probe force microscopy; Domain boundary; Air-stability

Funding

  1. National Natural Science Foundation of China [11334014, 51173205, 51203192, 61306085]
  2. Program for New Century Excellent Talents in University [NCET-13-0598]
  3. China Postdoctoral Science Foundation [2015T80881]
  4. Hunan Provincial Natural Science Foundation of China [2015JJ1015]
  5. Fundamental Research Funds for the Central Universities of Central South University [2015zzts013]
  6. National Science Foundation [DMR-1303742, CBET-1437656]
  7. State Key Laboratory of Powder Metallurgy of Central South University

Ask authors/readers for more resources

The development of air-stable and high-performance organic field-effect transistors (FETs) is highly important for practical applications. In present research we studied how the domain size and boundary influence the electrical properties and the stability of CuPc thin films fabricated by the weak epitaxial growth (WEG) method. The electrical properties of fresh CuPc devices have a strong dependence on the domain size, which has been demonstrated based on the analysis of film morphology, electrical properties, and kelvin probe force microscopy (KPFM) measurements. The field-effect mobility of fresh CuPc devices increased with the domain sizes, and the mobility as high as of 0.18 cm(2)/Vs was obtained for a large crystalline domain size of about 60 mu m(2). Furthermore, the CuPc/p-6P FETs with large domains of ordered crystallites show excellent stability after being exposed to ambient conditions for 20 days. In contrast, it was found that the device with randomly aligned crystallites stored in atmosphere with the same temperature and humidity for 20 days exhibited large changes in the electric characteristics including positive-shifted threshold voltage, much lower I-on/I-off and mobility. X-ray photoelectron spectroscopy (XPS) results proved that the oxygen content in ordered, large-domain CuPc thin film is much less than that in randomly aligned CuPc thin film with small-size crystallites as stored in the same conditions. It results from the diffusion of more oxygen and water into the randomly aligned CuPc thin film with small-size crystallites, which has more boundaries and higher degree of misorientation than the one with ordered, large-domain crystallites. The investigation reveals the importance of domain boundaries in the device stability, and provides a guide for rational optimization of film morphology for air-stable, high-performance organic FETs. (C) 2015 Elsevier B.V. All rights reserved.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.5
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available