Journal
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume 288, Issue -, Pages 66-73Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.nimb.2012.07.028
Keywords
Geant4-DNA; Energy-Loss Function; Inelastic cross-sections; Microdosimetry; Electrons; Silicon; MuElec
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The Energy-Loss Function (ELF) of silicon is used to calculate differential and total inelastic cross-sections of incident electrons. The model is validated in the 50 eV-50 keV incident energy range by comparing the inelastic cross-sections, stopping powers, and ranges to experimental and calculated data from the literature. It is applicable down to 16.7 eV. The cross sections are then used to simulate low-energy electron tracks in silicon with Geant4, using a similar implementation as the Geant4-DNA extension; this new Geant4 extension is called MuElec. Generation of low-energy electrons is clearly seen. The obtained ranges are consistent with experimental data. (C) 2012 Elsevier By. All rights reserved.
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