Journal
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume 276, Issue -, Pages 51-55Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.nimb.2012.01.034
Keywords
Swift heavy ion; Si-nanostructures; Silicon nitride
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Funding
- Indian institute of Technology Delhi
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We report here the response of in situ formed Si-nanostructures embedded in Si-rich hydrogenated amorphous silicon nitride matrix to 100 MeV Ni8+ ions irradiation under normal incidence at room temperature. Prior to irradiation, Si-nanostructures are amorphous in nature having partial crystallinity. Irradiation with a fluence of 5 x 10(12) ions/cm(2) leads to dissolution of Si-nanostructures. Nevertheless, irradiation with a relatively higher fluence of 1 x 10(14) ions/cm(2) enhances the nucleation and leads to the formation of amorphous Si-nanostructures. The results are understood on the basis of intense electronic energy loss induced hydrogen desorption and consequent rearrangement of the amorphous network under thermal spike formalism of ion-material interaction. Published by Elsevier B.V.
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