Journal
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume 282, Issue -, Pages 43-47Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.nimb.2011.08.036
Keywords
Swift heavy ions; Silicon; Thermal spike; Two-temperature model
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Funding
- Energy dissipation at surfaces and the research Center OPTIMAS [SFB 616]
- European Community [227012]
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We have studied damage of crystalline Si surfaces induced by electronic energy loss of swift heavy ions with an electronic stopping power of up to S-e = 12 keV/nm. Scanning tunneling microscope images of the surface after irradiation under perpendicular as well as glancing angles of incidence showed no surface damage. We have performed theoretical calculations for the damage threshold within the two temperature model, resulting in S-e(th) = 8 keV/nm as the minimum stopping power to create a molten zone. We investigate the respective influence of the electron-phonon coupling, of the criterion at which the damage occurs and a possible effect of ballistic electrons. We show that the latter has the strongest effect on the calculated damage threshold. (C) 2011 Elsevier B.V. All rights reserved.
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