Journal
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume 273, Issue -, Pages 105-108Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.nimb.2011.07.051
Keywords
Rutherford backscattering spectrometry; AlInN; Composition analysis
Ask authors/readers for more resources
In this work a careful manual analysis of Rutherford backscattering spectrometry spectra is discussed to determine the InN content of Al1-xInxN thin films grown on GaN buffer layers. The main source of error arises from the fact that the low signal of Al is superimposed to the high signal of Ga from the GaN buffer layer. The uncertainties in the derived InN fraction are discussed. Furthermore, it is shown that channelling effects only have a minor influence on the compositional analysis of the studied films although they can significantly reduce the count rate and distort the shape of the spectra. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available