Journal
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume 269, Issue 14, Pages 1630-1633Publisher
ELSEVIER
DOI: 10.1016/j.nimb.2010.11.033
Keywords
Ion tracks in solids; Monte Carlo simulations; Spatial and temporal deposited energy distributions; Electron-hole separation and charge distributions
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Spatial and temporal characteristics of energy deposition events and electron-hole distributions as a result of the passage of energetic ions in silicon are studied using Monte Carlo simulations, for incident ion energies in the range of 0.5-100 MeV/amu. Ion track radii as function of the incident ion energy are presented. The range of ion energies and masses for possible melting in the track region is calculated. It is also found that it is not possible to separate between the temporal and spatial characteristics. (C) 2010 Elsevier B.V. All rights reserved.
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