Journal
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume 269, Issue 11, Pages 1327-1331Publisher
ELSEVIER
DOI: 10.1016/j.nimb.2010.11.027
Keywords
Hexagonal boron nitride monolayer; Ion irradiation; Defect
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Atomistic computer simulations based on analytical potentials are employed to investigate the response of a hexagonal boron nitride monolayer to irradiation with noble gas ions having energies from 35 eV up to 10 MeV. Probabilities for creating different types of defects are calculated as functions of ion energy and incidence angle, along with sputtering yields of boron and nitrogen atoms. The presented results can be used for the optimization of ion processing of single-layer and bulk hexagonal boron nitride samples and for predicting the evolution of the material in radiation hostile environments. (C) 2010 Elsevier B.V. All rights reserved.
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