Journal
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume 268, Issue 6, Pages 622-626Publisher
ELSEVIER
DOI: 10.1016/j.nimb.2009.12.018
Keywords
Magnesia; Yttria-stabilized zirconia; Irradiation damage; Ion beam assisted deposition
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Funding
- US Department of Energy Office of Basic Energy Sciences, Division of Materials Sciences and Engineering
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To elucidate the underlying physics of ion beam assisted deposition (IBAD), irradiation damage effects in magnesia (MgO) and yttria-stabilized zirconia (YSZ) were investigated. Ion irradiations were performed on MgO and YSZ single crystals of three low-index crystallographic orientations using 100 and 150 key Ar+ ions over a fluence range from 1 x 10(14) to 5 x 10(16) Ar/cm(2). Damage accumulation was analyzed using Rutherford backscattering spectrometry combined with ion channeling. Damage evolution with increasing ion fluence proceeded via several characteristic stages and the total damage exhibited a strong dependence on crystallographic orientation. For both MgO and YSZ, damage anisotropy was maximal at a stage when the damage saturated, with the (1 1 0) crystallographic orientation being the most radiation damage resistant. The Ion/Atom ratio deposition parameter reported for IBAD of MgO and YSZ films was found to correlate with the damage plateau stage described above. Finally, the role of the Ion/Atom ratio is discussed in terms of radiation damage anisotropy mechanism. (C) 2010 Elsevier B.V. All rights reserved.
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