Journal
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume 266, Issue 8, Pages 1533-1536Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.nimb.2008.01.064
Keywords
RBS; ZnO; PLD; AFM; XRD
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Thin films of zinc oxide (ZnO), having different thicknesses were prepared by pulsed laser deposition (PLD) technique onto silicon Si(111) and quartz (SiO2) substrates at different partial pressures of oxygen. Rutherford back scattering (RBS) analysis was carried out in order to investigate effect of deposition parameters on thickness of films. Quality of the films was investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM) analyses. The thickness of the film was found to increase with oxygen partial pressure for both Si and SiO2 substrates. (C) 2008 Elsevier B.V. All rights reserved.
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