Journal
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume 266, Issue 12-13, Pages 2882-2886Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.nimb.2008.03.214
Keywords
ion track; electronic excitation; CeO2; rim structure; ion irradiation
Ask authors/readers for more resources
In order to understand the properties of ion tracks and the microstructural evolution under accumulation of ion tracks and Xe ions in CeO2, 70-210 MeV Xe10 similar to 14+ ions irradiation examinations and pre-implantations of 240 keV Xe ions have been done at a tandem accelerator facility and an ion implanter facility of JAEA-Tokai. The microstructure observations were performed by means of a transmission electron microscope (TEM) and a scanning electron microscope (SEM) in CRIEPI. Measurements of the diameter of ion tracks with the irradiation temperature, between room temperature and 800 degrees C, clarify that the prominent changes of ion tracks are hardly observed up to 800 degrees C. By cross-sectional observation, it becomes clear that the threshold electronic stopping power of ion track formation is around 15-16 keV/nm in case of Xe ions irradiation. 210 MeV Xe14+ ion irradiations cause a surface roughness on CeO2 in the ion fluence range between 5 x 10(14) ions/cm(2) and 1 x 10(15) ions/cm(2). (C) 2008 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available