4.4 Article

Measurement of efffective atomic numbers of holmium doped and undoped layered semiconductors via transmission method around the absorption edge

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ELSEVIER
DOI: 10.1016/j.nima.2008.12.144

Keywords

Mass attenuation coefficients; Semiconductors; Effective atomic number; Transmission method

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Effective atomic numbers were measured for InSe and InSe having different Holmium concentrations measured in the energy region 15.746-40.930 keV using a Si(Li) detector. InSe:Holmium(0.0025), InSe:Holmium(0.0050), InSe:Holmiurn(0.025) InSe:Holmium(0.05) and InSe crystals have been grown by the Bridgman-Stocbarger method. The measured values were compared with the theoretical ones obtained using WinXConn being a Windows version of XCOM on the basis of mixture rule. The objective of this work is to show that there is a relation between effective atomic numbers and doped Ho fractions to InSe. (C) 2009 Elsevier B.V. All rights reserved.

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