Journal
SUPERLATTICES AND MICROSTRUCTURES
Volume 83, Issue -, Pages 367-375Publisher
ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
DOI: 10.1016/j.spmi.2015.02.043
Keywords
Transistor; Illumination stability; Temperature-dependent field-effect measurements method; DOSs
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Funding
- Natural Science Foundation of China [51302165, 61274082, 61077013]
- 863 project [2010AA3A337, 2008AA 03A336]
- Innovation Fund of shanghai University
- Shanghai Municipal Education Commission [ZZSD13047]
- China Postdoctoral Science Special Fund [2012T50387]
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We investigate the stability of thin film transistors incorporating sputtered InZnO as the channel layer under negative bias illumination stress. The transfer characteristic for various active layer thicknesses is shifted toward the negative direction under negative bias illumination stress and the device with thicker channel layer shows a slighter VIE negative shift than another device under negative bias illumination stress. In order to investigate channel layer thickness can have a great effect on the trap density and thus affect the V-TH shift caused by charge trapping; we use temperature-dependent field-effect measurements method to accurately calculate their trap density. The results show that thicker InZnO channel layer has fewer DOSs, resulting in the decrease of charge trapping and the decrease of photoexcitation generated electron carrier. So the device with thicker channel layer shows a slighter VTH negative shift than another device under negative bias illumination stress. (C) 2015 Elsevier Ltd. All rights reserved.
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