Journal
SUPERLATTICES AND MICROSTRUCTURES
Volume 80, Issue -, Pages 20-31Publisher
ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
DOI: 10.1016/j.spmi.2014.12.018
Keywords
Density of states; Fowler-Nordheim tunneling; MOSFET; Quantum tunneling; Quantum well; Tunneling probability; WKB approximation
Categories
Ask authors/readers for more resources
A compact model for gate tunneling current in advanced nano-scale MOSFET has been developed on the basis of both direct and Fowler-Nordheim tunneling through dual layer Silicon oxide-Hafnium oxide stack used as gate dielectric. Calculation includes the effect of different subbands of the semiconductor conduction band those arise due to quantum confinement of charge carriers in the oxide-substrate interface. Effect of charge trapping in the bulk of the oxides and at the localized energy levels at different interfaces of the oxides has also been taken into consideration. Tunneling probability as a function of gate bias has been determined considering Wentzel-Kramers-Brillouin (WKB) approximation to account for varying potential profile. Probability amplitude of an electron for tunneling has been calculated by solving Schrodinger equations at different regions in the effective mass approximation model of class I crystal interface. Tunneling current as a function of effective oxide thickness and gate bias estimated in this model shows substantial reduction in gate leakage current if HfO2 as high-k dielectric is used along with 1 nm thick SiO2 with almost negligible change in threshold voltage. (C) 2015 Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available