Microstructure and crystal imperfections of nanosized CdSxSe1-x thermally evaporated thin films

Cadmium sulfoselenide CdSxSe1-x thin films were thermally evaporated onto preheated glass substrates (523 K). The evaporation rate and film thickness were kept constant at approximate to 2.5 nm/s and 375 +/- 5 nm, respectively. Microstructure and crystal imperfections of deposit CdSxSe1-x thin films were studied using X-ray diffraction (XRD) and energy dispersive analysis by X-ray (EDAX). XRD analysis reveals the formation of films have the semi-crystalline nature and the hexagonal structure with preferential < 002 > direction. The microstructural parameters such as, lattice parameters, the crystallite size (D), microstrain , residual internal stress (S), dislocation density (delta) and number of crystallite per unit volume (N) were calculated and found to be dependent upon the composition. The presence percentage of Cd, S and Se elements in the chalcogenide CdSxSe1-x thin films were estimated by EDAX and a comparative study with other similar samples of the previous literature was discussed. (C) 2015 Elsevier Ltd. All rights reserved.