Journal
SUPERLATTICES AND MICROSTRUCTURES
Volume 82, Issue -, Pages 430-437Publisher
ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
DOI: 10.1016/j.spmi.2015.02.024
Keywords
Tunnel field effect transistor (TFET); PNPN TFET; Tunneling; Dopingless; Hetero-gate-dielectric; N+ source pocket
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In this paper, we present a two-dimensional simulation study of a dopingless PNPN TFET with a hetero-gate dielectric. Using a dual-material-gate in a dopingless TFET, the energy band gap on the source side is modulated to create an N+ source pocket. Our technique obviates the need to use ion implantation for the formation of the N+ source pocket. The dopingless PNPN TFET with a heterogate dielectric is demonstrated to exhibit a superior performance in terms of ON-state current and subthreshold swing when compared to a conventional dopingless TFET. Our results may pave the way for realizing high performance dopingless TFETs using a low thermal budget required for low power and low cost applications. (C) 2015 Published by Elsevier Ltd.
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