Journal
NEW JOURNAL OF PHYSICS
Volume 16, Issue -, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1367-2630/16/9/095004
Keywords
silicene; growth; STM; Ag ultra-thin films
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Funding
- Kakenhi from the Japan Society for the Promotion of Science (JSPS) [26286048]
- Grants-in-Aid for Scientific Research [26286048] Funding Source: KAKEN
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Epitaxial growth of silicene on atomically flat ultra-thin Ag(111) films was investigated using scanning tunneling microscopy. The Ag films were prepared by low-temperature deposition of Ag on Si substrates, followed by soft annealing at room temperature. Patchy 4 x 4, root 13 x root 13, root 7 x root 7, and 2 root 3 x 2 root 3 silicene domains were nucleated on regions that were one monolayer lower than the pristine Ag surface after the initial morphological change had been completed. On the first-layer silicene containing the above domains, two types of root 3 x root 3 silicene domains (root 3 x root 3-alpha and beta) were formed in the second layer. A bias voltage-independent Moire pattern was observed for the root 3 x root 3-alpha silicene, and a bias voltage-dependent standing wave pattern for the root 3 x root 3-beta silicene. The root 3 x root 3-beta silicene had a dispersion relation that could be fitted using a linear function, although the resulting Fermi velocity was twice as large as the expected value.
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