Journal
NEW JOURNAL OF PHYSICS
Volume 16, Issue -, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1367-2630/16/4/045003
Keywords
semiconductor band edges; space-charge layer; Rashba effect
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Funding
- National Science Council of Taiwan [NSC 98-2112-M-007-017-MY3, NSC 102-2112-M-007-009-MY3]
- National Science Council, Taiwan
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The observed heavy-hole, light-hole and split-off band edges of a semiconductor are the well known consequence of two physical processes: atomic spin-orbital interaction and solid-state band-band anticrossing. In this work, we examined the four band-edge-like bands in great detail within the Ge space-charge layer with either Pb/Ge(111)-root 3 x root 3 R30 degrees or a 2ML Pb film on Ge(111). Our results reveal that the conventional picture of band edges for a semiconductor is actually crude. In addition, momentum-dependent Rashba splitting effect can be included to explain the observed non-split-off band, indicating the Rashba effect as an intrinsic property near a semiconductor surface.
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