Journal
NEW JOURNAL OF PHYSICS
Volume 14, Issue -, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1367-2630/14/4/043024
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Funding
- Office of Science, Office of Basic Energy Sciences, Scientific User Facilities Division, of the US Department of Energy [DE-AC02-05CH11231]
- Lawrence Berkeley National Laboratory
- DARPA through UC Santa Barbara
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Exposure to beams of low-energy electrons (2-30 keV) in a scanning electron microscope locally induces formation of NV-centers without thermal annealing in diamonds that have been implanted with nitrogen ions. We find that non-thermal, electron-beam-induced NV-formation is about four times less efficient than thermal annealing. But NV-center formation in a consecutive thermal annealing step (800 degrees C) following exposure to low-energy electrons increases by a factor of up to 1.8 compared to thermal annealing alone. These observations point to reconstruction of nitrogen-vacancy complexes induced by electronic excitations from low-energy electrons as an NV-center formation mechanism and identify local electronic excitations as a means for spatially controlled room-temperature NV-center formation.
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