Journal
NEW JOURNAL OF PHYSICS
Volume 13, Issue -, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1367-2630/13/3/033022
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Funding
- National Science Foundation of China [11074234]
- University of Science and Technology of China
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We study the disorder effect on the excitonic gap generation caused by strong Coulomb interaction in graphene. By solving the self-consistently coupled equations of dynamical fermion gap m and disorder scattering rate Gamma, we have found a critical line on the plane of interaction strength lambda and disorder strength g. The phase diagram is divided into two regions: in the region with large lambda and small g, m not equal 0 and Gamma = 0; in the other region, m = 0 and Gamma not equal 0 for nonzero g. In particular, there is no coexistence of finite fermion gap and finite scattering rate. These results imply a strong competition between excitonic gap generation and disorder scattering. This conclusion does not change when an additional contact four-fermion interaction is included. For sufficiently large lambda, the growing disorder may drive a quantum phase transition from an excitonic insulator to a metal.
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