Journal
NEW JOURNAL OF PHYSICS
Volume 11, Issue -, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1367-2630/11/12/125023
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Funding
- European FP7 [233950]
- ANR-06-BLAN-0130
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This paper reviews recent progress toward intersubband (ISB) devices based on III-nitride quantum wells (QWs). First, we discuss the specific features of ISB active region design using GaN/AlGaN materials, and show that the ISB wavelength can be tailored in a wide spectral range from near-to long infrared wavelengths by engineering the internal electric field and layer thicknesses. We then describe recent results for electro-optical waveguide modulator devices exhibiting a modulation depth as large as 14 dB at telecommunication wavelengths. Finally, we address a new concept of III-nitride QW detectors based on the quantum cascade scheme, and show that these photodetectors offer the prospect of high-speed devices at telecommunication wavelengths.
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