Journal
NEW JOURNAL OF PHYSICS
Volume 11, Issue -, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1367-2630/11/2/023008
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Funding
- EU [IST-015728, FP7]
- NAMASTE [214499]
- Czech Republic [FON/06/E001, FON/06/E002, AV0Z1010052, KAN400100652, LC510]
- US Grant SWAN-NRI
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Controlling the magnetization by low-voltage charge depletion in field-effect transistors has been a formidable challenge due to the typically large carrier concentrations in ferromagnets compared to semiconductors. Here we demonstrate that this concept is viable in an all-semiconductor, p-n junction transistor utilizing a thin-film ferromagnetic (Ga, Mn) As channel. We report gate-dependent Curie temperature and magnetoresistance, and persistent magnetization switchings induced by short electrical pulses of a few volts.
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