Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 142, Issue -, Pages 29-33Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.solmat.2015.05.027
Keywords
Nano-texturing; Surface passivation; Reactive ion etching; Negative charge; Al2O3; Atomic Layer Deposition
Funding
- Energy Efficiency Research Program of Aalto University School of Electrical Engineering (Effinano Project) [91581015]
- Aalto University
- BarcelonaTech
- Interdisciplinary Centre for Electron Microscopy in Lausanne, Switzerland
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We demonstrate that n-type black silicon can be passivated efficiently using Atomic Layer Deposited (ALD) Al2O3, reaching maximum surface recombination velocities below 7 cm/s. We show that the low surface recombination velocity results from a higher sensitivity of the nanostructures to surface charge and from the absence of surface damage after black silicon etching. The surface recombination velocity is shown to be inversely proportional to the fourth power of the negative charge in contrast to the quadratic dependence observed in planar surfaces. This effect compensates the impact of the increased surface area in the nanostructures and extends the potential of black silicon for instance to n-type Interdigitated Back Contact (IBC) cells. (C) 2015 Elsevier B.V. All rights reserved.
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