Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 137, Issue -, Pages 258-264Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.solmat.2015.02.006
Keywords
Single phased MnZnO3; Thin film; Nanoparticle; Semiconductor; Band gap; Photoanode
Funding
- High-Impact Research Grant [UM.C/625/1/HIR/242]
- UMRG [UM.TNC2/RC/261/1/1/RP007A/B-13AET]
- HIR-MOHE-SC21 [UM.S/13/628/3]
- UK EPSRC
- Johnson Matthey Plc
- Loughborough University
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Single phased manganese-zinc oxide (MnZnO3) solid solution thin films have been deposited on fluorine doped tin oxide (FM) coated glass substrates by aerosol assisted chemical vapor deposition (AACVD) using a single source bimetallic complex, [Mn2Zn2(TFA)(8)(THF)(4)](n) (1) (where TFA=trifluroactetato and THF=tetrahydrofuran), as precursor. The complex (1) was obtained by direct reaction of diacetatozinc(II) dihydrate, diacetatomanganese(II) and trifloroacetic acid in THF and was characterized by physicochemical methods. The thickness of the film observed by a profilometer, is about 375 nm. The phase purity and the stoichiometry of the films were determined by X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy (EDX). The field emission gun-scanning electron microscopic (FEG-SEM) and atomic force microscopic (AFM) images confirmed that the film deposited at 500 degrees C shows an agglomerated flower-like structure with high roughness and porosity. The optical measurements suggested that MnZnO3 has a direct band gap of 2.18 eV. The photoelectrochemical (PEC) studies showed an anodic photocurrent density of 300 mu A/cm(2) at 0 V vs. Ag/AgCl/3 M KCl. (C) 2015 Elsevier B.V. All rights reserved.
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