Journal
SMALL
Volume 12, Issue 5, Pages 595-601Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201502336
Keywords
graphene; detectivity; noise spectra; heterojunctions; photodetectors
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Funding
- National Natural Science Foundation of China [21322302, 51402060, 51372133]
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A graphene/n-type silicon (n-Si) heterojunction has been demonstrated to exhibit strong rectifying behavior and high photoresponsivity, which can be utilized for the development of high-performance photodetectors. However, graphene/n-Si heterojunction photodetectors reported previously suffer from relatively low specific detectivity due to large dark current. Here, by introducing a thin interfacial oxide layer, the dark current of graphene/n-Si heterojunction has been reduced by two orders of magnitude at zero bias. At room temperature, the graphene/n-Si photodetector with interfacial oxide exhibits a specific detectivity up to 5.77 x 10(13) cm Hz(1/2) W-1 at the peak wavelength of 890 nm in vacuum, which is highest reported detectivity at room temperature for planar graphene/Si heterojunction photodetectors. In addition, the improved graphene/n-Si heterojunction photodetectors possess high responsivity of 0.73 A W-1 and high photo-to-dark current ratio of approximate to 10(7). The current noise spectral density of the graphene/n-Si photodetector has been characterized under ambient and vacuum conditions, which shows that the dark current can be further suppressed in vacuum. These results demonstrate that graphene/Si heterojunction with interfacial oxide is promising for the development of high detectivity photodetectors.
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