Journal
NATURE PHOTONICS
Volume 8, Issue 5, Pages 412-418Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/nphoton.2014.80
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Funding
- US Army Research Office [W911NF-12-2-0035]
- US National Science Foundation [ECCS-1232184]
- UK Engineering and Physical Sciences Research Council
- European Research Council Advanced Grant 'TOSCA'
- EPSRC [EP/K03135X/1, EP/J005282/1] Funding Source: UKRI
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1232184] Funding Source: National Science Foundation
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The spectral response of common optoelectronic photodetectors is restricted by a cutoff wavelength limit lambda(c) that is related to the activation energy (or bandgap) of the semiconductor structure (or material) (Delta) through the relationship lambda(c) = hc/Delta. This spectral rule dominates device design and intrinsically limits the long-wavelength response of a semiconductor photodetector. Here, we report a new, long-wavelength photodetection principle based on a hot-cold hole energy transfer mechanism that overcomes this spectral limit. Hot carriers injected into a semiconductor structure interact with cold carriers and excite them to higher energy states. This enables a very long-wavelength infrared response. In our experiments, we observe a response up to 55 mu m, which is tunable by varying the degree of hot-hole injection, for a GaAs/AIGaAs sample with Delta = 0.32 eV (equivalent to 3.9 mu m in wavelength).
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