Journal
NATURE PHOTONICS
Volume 6, Issue 9, Pages 610-614Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/nphoton.2012.204
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Funding
- Enterprise Ireland
- IDA Ireland
- EU-IAPP programme [286285]
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The hard-drive and electronic industries can benefit by using the properties of light for power transfer and signalling. However, the integration of silicon electronics with lasers remains a challenge, because practical monolithic silicon lasers are not currently available. Here, we demonstrate a strategy for this integration, using an elastomeric stamp to selectively release and transfer epitaxial coupons of GaAs to realize III-V lasers on a silicon substrate by means of a wafer-scale printing process. Low-threshold continuous-wave lasing at a wavelength of 824 nm is achieved from Fabry-Perot ridge waveguide lasers operating at temperatures up to 100 degrees C. Single and multi-transverse mode devices emit total optical powers of >60 mW and support modulation bandwidths of >3 GHz. This fabrication strategy opens a route to the low-cost integration of III-V photonic devices and circuits on silicon and other substrates.
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