Direct generation of multiple excitons in adjacent silicon nanocrystals revealed by induced absorption

The enhancement of carrier multiplication in semiconductor nanocrystals attracts a great deal of attention because of its potential in photovoltaic applications. Here, we present the results of investigations of a novel carrier multiplication mechanism recently proposed for closely spaced silicon nanocrystals in SiO2 on the basis of photoluminescence. Using ultrafast pump-probe spectroscopy rigorously calibrated for the number of absorbed photons, we find that adjacent nanocrystals are excited directly upon absorption of a single high-energy photon. We demonstrate efficient carrier multiplication with an onset close to the energy conservation threshold of twice the bandgap, 2E(g). Moreover, with absorption of a single high-energy photon under low pump fluence conditions, it was found that carrier-carrier interaction was significantly suppressed, but the amplitude of the signal was enhanced. We show that these results are in excellent agreement with the dependence of photoluminescence quantum yield on excitation, as reported previously for similar materials.