Journal
NATURE NANOTECHNOLOGY
Volume 9, Issue 5, Pages 372-377Publisher
NATURE PORTFOLIO
DOI: 10.1038/NNANO.2014.35
Keywords
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Funding
- National Basic Research Program of China (973 Program) [2011CB921802, 2012CB921400, 2013CB921902, 2012CB922002]
- NSF of China [11034001]
- 'Strategic Priority Research Program' of the Chinese Academy of Sciences [XDB04040100]
- Pu Jiang Program of Shanghai [12PJ1401000]
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Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new functional two-dimensional materials is challenging, but also potentially rewarding. Here, we fabricate field-effect transistors based on few-layer black phosphorus crystals with thickness down to a few nanometres. Reliable transistor performance is achieved at room temperature in samples thinner than 7.5 nm, with drain current modulation on the order of 10(5) and well-developed current saturation in the I-V characteristics. The charge-carrier mobility is found to be thickness-dependent, with the highest values up to similar to 1,000 cm(2) V-1 s(-1) obtained for a thickness of similar to 10nm. Our results demonstrate the potential of black phosphorus thin crystals as a new two-dimensional material for applications in nanoelectronic devices.
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