Journal
NATURE NANOTECHNOLOGY
Volume 9, Issue 8, Pages 611-617Publisher
NATURE RESEARCH
DOI: 10.1038/NNANO.2014.148
Keywords
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Funding
- Leading Graduate Program of Materials Education for future leaders in Research, Industry and Technology (MERIT)
- Advanced Leading Graduate Course for Photon Science (ALPS)
- JSPS
- Strategic International Collaborative Research Program (SICORP-LEMSUPER)
- Precursory Research for Embryonic Science and Technology (PRESTO)
- Japan Science and Technology Agency
- Research Hub for Advanced Nano Characterization
- University of Tokyo
- MEXT, Japan
- Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program) from JSPS, Japan
- [25000003]
- [23244066]
- Grants-in-Aid for Scientific Research [13J09046, 13J09893, 25000003] Funding Source: KAKEN
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The valley degree of freedom of electrons is attracting growing interest as a carrier of information in various materials, including graphene, diamond and monolayer transition-metal dichalcogenides. The monolayer transition-metal, dichalcogenides are semiconducting and are unique due to the coupling between the spin and valley degrees of freedom originating from the relativistic spin-orbit interaction. Here, we report the direct observation of valley-dependent out-of-plane spin polarization in an archetypal transition-metal dichalcogenide-MoS2-using spin- and angle-resolved photoemission spectroscopy. The result is in fair agreement with a first-principles theoretical prediction. This was made possible by choosing a 3R polytype crystal, which has a non-centrosymmetric structure, rather than the conventional centrosymmetric 2H form. We also confirm robust valley polarization in the 3R form by means of circularly polarized photoluminescence spectroscopy. Non-centrosymmetric transition-metal dichalcogenide crystals may provide a firm basis for the development of magnetic and electric manipulation of spin/valley degrees of freedom.
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