Journal
NATURE NANOTECHNOLOGY
Volume 8, Issue 8, Pages 549-555Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/NNANO.2013.144
Keywords
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Funding
- Semiconductor Research Corporation (SRC)
- Defence Advanced Research Project Agency (DARPA) through FCRP Center for Function Accelerated nanoMaterial Engineering (FAME)
- National Science Foundation (NSF) [CCF-1217382, EECS-1124733, EECS-1102074]
- Direct For Computer & Info Scie & Enginr [1217382] Funding Source: National Science Foundation
- Division of Computing and Communication Foundations [1217382] Funding Source: National Science Foundation
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Low-frequency noise with a spectral density that depends inversely on frequency has been observed in a wide variety of systems including current fluctuations in resistors, intensity fluctuations in music and signals in human cognition. In electronics, the phenomenon, which is known as 1/f noise, flicker noise or excess noise, hampers the operation of numerous devices and circuits, and can be a significant impediment to the development of practical applications from new materials. Graphene offers unique opportunities for studying 1/f noise because of its two-dimensional structure and widely tunable two-dimensional carrier concentration. The creation of practical graphene-based devices will also depend on our ability to understand and control the low-frequency noise in this material system. Here, the characteristic features of 1/f noise in graphene and few-layer graphene are reviewed, and the implications of such noise for the development of graphene-based electronics including high-frequency devices and sensors are examined.
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