Journal
NATURE MATERIALS
Volume 13, Issue 12, Pages 1135-1142Publisher
NATURE RESEARCH
DOI: 10.1038/NMAT4091
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Funding
- Army Research Office MURI grant [W911NF-11-1-0362]
- US DOE grant [DE-FG02-09ER46554]
- Wigner Fellowship through the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory (ORNL)
- FAME Center, one of six centres of STARnet, a Semiconductor Research Corporation program - MARCO
- DARPA
- US Office of Naval Research MURI grant [N000014-09-1-1066]
- NSF grant [ECCS-1327093]
- MOE Academic Research Fund (AcRF) Tier 1 project Singapore [RG81/12]
- Si-COE project, Singapore
- ORNL's Center for Nanophase Materials Sciences (CNMS) - Scientific User Facilities Division, Office of Basic Energy Sciences, US DOE
- Office of Science of the US Department of Energy [DE-AC02-05CH11231]
- Singapore National Research Foundation under NRF RF Award [NRF-RF2013-02]
- Nanyang Technological University [M4081137.070]
- U.S. Department of Energy (DOE) [DE-FG02-09ER46554] Funding Source: U.S. Department of Energy (DOE)
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1327093] Funding Source: National Science Foundation
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Layer-by-layer stacking or lateral interfacing of atomic monolayers has opened up unprecedented opportunities to engineer two-dimensional heteromaterials. Fabrication of such artificial heterostructures with atomically clean and sharp interfaces, however, is challenging. Here, we report a one-step growth strategy for the creation of high-quality vertically stacked as well as in-plane interconnected heterostructures ofWS(2)/MoS2 via control of the growth temperature. Vertically stacked bilayers with WS2 epitaxially grown on top of the MoS2 monolayer are formed with preferred stacking order at high temperature. A strong interlayer excitonic transition is observed due to the type II band alignment and to the clean interface of these bilayers. Vapour growth at low temperature, on the other hand, leads to lateral epitaxy of WS2 on MoS2 edges, creating seamless and atomically sharp in-plane heterostructures that generate strong localized photoluminescence enhancement and intrinsic p-n junctions. The fabrication of heterostructures from monolayers, using simple and scalable growth, paves the way for the creation of unprecedented two-dimensional materials with exciting properties.
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