Journal
NATURE MATERIALS
Volume 13, Issue 2, Pages 151-156Publisher
NATURE RESEARCH
DOI: 10.1038/nmat3806
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Funding
- Australian Research Council, Centre of Excellence Engineered Quantum Systems [CE110001013]
- Japanese Society for the Promotion of Science (JSPS) [22.00802]
- Australian Research Council Centre for Quantum Computation and Communication Technology [CE110001027]
- Ministry of Education, Science, Sports and Culture [24656025]
- EU FP7 [270197]
- Hungarian OTKA [K101819, K106114]
- Knut and Alice Wallenberg Foundation
- Grants-in-Aid for Scientific Research [24656025] Funding Source: KAKEN
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Over the past few years, single-photon generation has been realized in numerous systems: single molecules(1), quantum dots(2-4), diamond colour centres5 and others(6). The generation and detection of single photons play a central role in the experimental foundation of quantum mechanics(7) and measurement theory(8). An efficient and high-quality single-photon source is needed to implement quantum key distribution, quantum repeaters and photonic quantum information processing(9). Here we report the identification and formation of ultrabright, room-temperature, photostable single-photon sources in a device-friendly material, silicon carbide (SiC). The source is composed of an intrinsic defect, known as the carbon antisite-vacancy pair, created by carefully optimized electron irradiation and annealing of ultrapure SiC. An extreme brightness (2 x 10(6) counts s(-1)) resulting from polarization rules and a high quantum efficiency is obtained in the bulk without resorting to the use of a cavity or plasmonic structure. This may benefit future integrated quantum photonic devices(9).
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