Journal
NATURE MATERIALS
Volume 12, Issue 7, Pages 628-633Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/NMAT3655
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Funding
- NSF IRFP [OISE-1201915]
- NSF ConvEne IGERT Program [NSF-DGE 0801627]
- NSF
- NSF ICC program [CHE-1026664]
- NSF SOLAR program [CHE-1035292]
- MRSEC Program of the NSF [DMR-1121053]
- Center for Energy Efficient Materials, an Energy Frontier Research Center
- US Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-SC0001009]
- Laboratory Directed Research and Development (LDRD) from NREL [06RF1201]
- UK's Engineering and Physical Sciences Research Council [EP/G060738/1]
- Dutch Polymer Institute (LATFE programme)
- ACS Petroleum Fund
- European Research Council (ERC) [279587]
- EPSRC [EP/G060738/1] Funding Source: UKRI
- Direct For Mathematical & Physical Scien [1026664] Funding Source: National Science Foundation
- Division Of Chemistry [1026664] Funding Source: National Science Foundation
- Office Of The Director
- Office Of Internatl Science &Engineering [1201915] Funding Source: National Science Foundation
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Additives, including nucleating agents, have been used to regulate the solidification process of (semi-)crystalline polymer solids and thus control both their crystallite dimensions and shape(1-5). Here, we demonstrate that minute amounts (0.1-1 wt%) of commercially available nucleating agents can be used to efficiently manipulate the solidification kinetics of a wide range of organic semiconductors-including poly(3-alkylthiophene)s, the fullerene derivative [6,6]-phenyl-C-61-butyric acid methyl ester (PCBM) and 6,13-bis(triisopropyl-silylethynyl) (TIPS) pentacene-when processed from the melt, solution or solid state, without adversely affecting the semiconductors' electronic properties. Heterogeneous nucleation increases the temperature of and rate of crystallization of poly(3-alkylthiophene) s, permits patterning of crystallites at pre-defined locations in PCBM, and minimizes dewetting of films of TIPS-pentacene formed by inkjet printing. Nucleating agents thus make possible the fabrication of thin-film transistors with uniform electrical characteristics at high yield.
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