Journal
NATURE MATERIALS
Volume 11, Issue 10, Pages 860-864Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/NMAT3415
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Funding
- European Research Council (ERC) [267579, 259068]
- French Agence Nationale de la Recherche (ANR) MHANN and NOMILOPS
- Herchel Smith Fellowship
- European Research Council (ERC) [259068] Funding Source: European Research Council (ERC)
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Memristors are continuously tunable resistors that emulate biological synapses(1,2). Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, although the details of the mechanism remain under debate(3-5). Purely electronic memristors based on well-established physical phenomena with albeit modest resistance changes have also emerged(6,7). Here we demonstrate that voltage-controlled domain configurations in ferroelectric tunnel barriers(8-10) yield memristive behaviour with resistance variations exceeding two orders of magnitude and a 10 ns operation speed. Using models of ferroelectric-domain nucleation and growth(11,12), we explain the quasi-continuous resistance variations and derive a simple analytical expression for the memristive effect. Our results suggest new opportunities for ferroelectrics as the hardware basis of future neuromorphic computational architectures.
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