Journal
NATURE MATERIALS
Volume 10, Issue 7, Pages 521-526Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/NMAT3051
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Funding
- Japan Society for the Promotion of Science
- Grants-in-Aid for Scientific Research [22104010, 22684017, 23340105, 21224008, 23244066] Funding Source: KAKEN
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There has been increasing interest in phenomena emerging from relativistic electrons in a solid, which have a potential impact on spintronics and magnetoelectrics. One example is the Rashba effect, which lifts the electron-spin degeneracy as a consequence of spin-orbit interaction under broken inversion symmetry. A high-energy-scale Rashba spin splitting is highly desirable for enhancing the coupling between electron spins and electricity relevant for spintronic functions. Here we describe the finding of a huge spin-orbit interaction effect in a polar semiconductor composed of heavy elements, BiTeI, where the bulk carriers are ruled by large Rashba-like spin splitting. The band splitting and its spin polarization obtained by spin- and angle-resolved photoemission spectroscopy are well in accord with relativistic first-principles calculations, confirming that the spin splitting is indeed derived from bulk atomic configurations. Together with the feasibility of carrier-doping control, the giant-Rashba semiconductor BiTeI possesses excellent potential for application to various spin- dependent electronic functions.
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