Journal
NATURE MATERIALS
Volume 10, Issue 9, Pages 655-659Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/NMAT3052
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Funding
- Cabinet Office, Government of Japan from MEXT, Japan [2284005]
- MIC, Japan [102102001]
- MEXT, Japan [19048028, 19048009, 21244058]
- CREST-JST, Japan
- IMS, Japan
- Grants-in-Aid for Scientific Research [22540346, 19048009] Funding Source: KAKEN
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Injection of spin currents into solids is crucial for exploring spin physics and spintronics(1,2). There has been significant progress in recent years in spin injection into high-resistivity materials, for example, semiconductors and organic materials, which uses tunnel barriers to circumvent the impedance mismatch problem(3-14); the impedance mismatch between ferromagnetic metals and high-resistivity materials drastically limits the spin-injection efficiency(15). However, because of this problem, there is no route for spin injection into these materials through low-resistivity interfaces, that is, Ohmic contacts, even though this promises an easy and versatile pathway for spin injection without the need for growing high-quality tunnel barriers. Here we show experimental evidence that spin pumping enables spin injection free from this condition; room-temperature spin injection into GaAs from Ni81Fe19 through an Ohmic contact is demonstrated through dynamical spin exchange. Furthermore, we demonstrate that this exchange can be controlled electrically by applying a bias voltage across a Ni81Fe19/GaAs interface, enabling electric tuning of the spin-pumping efficiency.
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