Journal
NATURE MATERIALS
Volume 9, Issue 6, Pages 496-503Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/NMAT2751
Keywords
-
Categories
Funding
- MIUR [FIRBRBIP06YWBH, FIRB-RBIP0642YL]
- MSE [Industria 2015]
- EU [PF6 035859-2, FP7-ICT-248052]
Ask authors/readers for more resources
The potential of organic semiconductor-based devices for light generation is demonstrated by the commercialization of display technologies based on organic light-emitting diodes (OLEDs). Nonetheless, exciton quenching and photon loss processes still limit OLED efficiency and brightness. Organic light-emitting transistors (OLETs) are alternative light sources combining, in the same architecture, the switching mechanism of a thin-film transistor and an electroluminescent device. Thus, OLETs could open a new era in organic optoelectronics and serve as testbeds to address general fundamental optoelectronic and photonic issues. Here, we introduce the concept of using a p-channel/emitter/n-channel trilayer semiconducting heterostructure in OLETs, providing a new approach to markedly improve OLET performance and address these open questions. In this architecture, exciton-charge annihilation and electrode photon losses are prevented. Our devices are > 100 times more efficient than the equivalent OLED, > 2x more efficient than the optimized OLED with the same emitting layer and > 10 times more efficient than any other reported OLETs.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available