Journal
NATURE MATERIALS
Volume 9, Issue 6, Pages 491-495Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/NMAT2752
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Funding
- EU [IRG 39302]
- ANR [ANR-06-NANO-054-01, ANR-06-NANO-020, ANR-06-BLAN-129]
- Conseil Regional d'Aquitaine
- DFG [SPP1386, RA 1634/5-1]
- European Regional Development Fund [4212/09-13]
- State of Saxony
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The ability to precisely control the thermal conductivity (kappa) of a material is fundamental in the development of on-chip heat management or energy conversion applications. Nanostructuring permits a marked reduction of kappa of single-crystalline materials, as recently demonstrated for silicon nanowires. However, silicon-based nanostructured materials with extremely low kappa are not limited to nanowires. By engineering a set of individual phonon-scattering nanodot barriers we have accurately tailored the thermal conductivity of a single-crystalline SiGe material in spatially defined regions as short as similar to 15 nm. Single-barrier thermal resistances between 2 and 4 x 10(-9) m(2) KW-1 were attained, resulting in a room-temperature kappa down to about 0.9Wm(-1)K(-1), in multilayered structures with as little as five barriers. Such low thermal conductivity is compatible with a totally diffuse mismatch model for the barriers, and it is well below the amorphous limit. The results are in agreement with atomistic Green's function simulations.
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