Journal
NATURE MATERIALS
Volume 8, Issue 1, Pages 62-67Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/NMAT2339
Keywords
-
Categories
Funding
- Fondation Louvain (Fonds de Recherche Solvay)
- Communaute Francaise de Belgique [ARC 06-11/339]
- Wallonia Region
- Belgian Federal Science Policy [IAP-PAI P6/27]
Ask authors/readers for more resources
Ferroelectric nanostructures are attracting tremendous interest because they offer a promising route to novel integrated electronic devices such as non-volatile memories and probe-based mass data storage. Here, we demonstrate that high-density arrays of nanostructures of a ferroelectric polymer can be easily fabricated by a simple nano-embossing protocol, with integration densities larger than 33 Gbits inch(-2). The orientation of the polarization axis, about which the dipole moment rotates, is simultaneously aligned in plane over the whole patterned region. Internal structural defects are significantly eliminated in the nanostructures. The improved crystal orientation and quality enable well-defined uniform switching behaviour from cell to cell. Each nanocell shows a narrow and almost ideal square-shaped hysteresis curve, with low energy losses and a coercive field of similar to 10 MV m(-1), well below previously reported bulk values. These results pave the way to the fabrication of soft plastic memories compatible with all-organic electronics and low-power information technology.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available