Journal
NATURE CHEMISTRY
Volume 4, Issue 4, Pages 281-286Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/nchem.1277
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Funding
- National Science Foundation of China [20973007, 20973013, 50821061, \21173004, 11104003]
- National Basic Research Program of China [2012CB933404, 2011CB921904]
- Program for New Century Excellent Talents in universities (NCET)
- Scientific Research Foundation for Returned Overseas Chinese Scholars, the State Education Ministry (SRF for ROCS, SEM)
- Department of Energy, Office of Basic Energy Sciences [DE-AC02-76SF00515]
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Topological insulators are an intriguing class of materials with an insulating bulk state and gapless Dirac-type edge/surface states. Recent theoretical work predicts that few-layer topological insulators are promising candidates for broadband and high-performance optoelectronic devices due to their spin-momentum-locked massless Dirac edge/surface states, which are topologically protected against all time-reversal-invariant perturbations. Here, we present the first experimental demonstration of near-infrared transparent flexible electrodes based on few-layer topological-insulator Bi2Se3 nanostructures epitaxially grown on mica substrates by means of van der Waals epitaxy. The large, continuous, Bi2Se3-nanosheet transparent electrodes have single Dirac cone surface states, and exhibit sheet resistances as low as similar to 330 Omega per square, with a transparency of more than 70% over a wide range of wavelengths. Furthermore, Bi2Se3-nanosheet transparent electrodes show high chemical and thermal stabilities as well as excellent mechanical durability, which may lead to novel optoelectronic devices with unique properties.
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