Journal
NATURE
Volume 459, Issue 7248, Pages 820-823Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/nature08105
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Funding
- Office of Basic Energy Sciences, US Department of Energy [DE-AC03-76SF0098, DE-AC02-05CH11231]
- Sloan fellowship
- Miller fellowship
- National Science Council of Taiwan
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The electronic bandgap is an intrinsic property of semiconductors and insulators that largely determines their transport and optical properties. As such, it has a central role in modern device physics and technology and governs the operation of semiconductor devices such as p-n junctions, transistors, photodiodes and lasers(1). A tunable bandgap would be highly desirable because it would allow great flexibility in design and optimization of such devices, in particular if it could be tuned by applying a variable external electric field. However, in conventional materials, the bandgap is fixed by their crystalline structure, preventing such bandgap control. Here we demonstrate the realization of a widely tunable electronic bandgap in electrically gated bilayer graphene. Using a dual-gate bilayer graphene field-effect transistor (FET)(2) and infrared microspectroscopy(3-5), we demonstrate a gate-controlled, continuously tunable bandgap of up to 250 meV. Our technique avoids uncontrolled chemical doping(6-8) and provides direct evidence of a widely tunable bandgap-spanning a spectral range from zero to mid-infrared-that has eluded previous attempts(2,9). Combined with the remarkable electrical transport properties of such systems, this electrostatic bandgap control suggests novel nanoelectronic and nanophotonic device applications based on graphene.
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